vishay siliconix si3475dv new product document number: 74249 s-62239?rev. a, 06-nov-06 www.vishay.com 1 p-channel 200-v (d-s) mosfet features ?trenchfet ? power mosfet ? 100 % r g and uis tested applications ? active clamp circuits in dc/dc power supplies product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ) - 200 1.61 at v gs = - 10 v - 0.95 8 nc 1.65 at v gs = - 6 v - 0.93 notes: a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 sec. d. maximum under steady state conditions is 110 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 200 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 0.95 a a t c = 70 c - 0.77 t a = 25 c - 0.75 b,c t a = 70 c - 0.59 b,c pulsed drain current i dm - 3 continuous source-drain diode current t c = 25 c i s - 2.6 t a = 25 c 1.6 b,c avalanche current l = 0.1 mh i as 3 single-pulse avalanche energy e as 0.45 mj maximum power dissipation t c = 25 c p d 3.2 w t c = 70 c 2.1 t a = 25 c 2 b,c t a = 70 c 1.25 b,c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 sec r thja 51 62.5 c/w maximum junction-to-foot steady state r thjf 32 39 m a rking code ai xxx lot tr a ce a b ility a nd d a te code p a rt # code orderin g information: s i 3 475dv-t1-e 3 (le a d (p b )-free t s op-6 top view 6 4 1 2 3 5 3 mm 2. 8 5 mm d d d d s g s g d p-ch a nnel mo s fet rohs compliant
www.vishay.com 2 document number: 74249 s-62239?rev. a, 06-nov-06 vishay siliconix si3475dv notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 200 v v ds temperature coefficient v ds /t j i d = - 250 a - 240 mv/c v gs(th) temperature coefficient v gs(th) /t j 6.2 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 2 - 4 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 200 v, v gs = 0 v - 1 a v ds = - 200 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 10 v, v gs = - 10 v - 2 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 0.9 a 1.34 1.61 v gs = - 6 v, i d = - 0.7 a 1.37 1.65 forward transconductance a g fs v ds = - 10 v, i d = - 0.9 a 3.5 s dynamic b input capacitance c iss v ds = - 50 v, v gs = 0 v, f = 1 mhz 500 pf output capacitance c oss 26 reverse transfer capacitance c rss 18 total gate charge q g v ds = - 100 v, v gs = - 10 v, i d = - 1 a 11.7 18 nc v ds = - 100 v, v gs = - 6 v, i d = - 1 a 7.8 12 gate-source charge q gs 2 gate-drain charge q gd 3.7 gate resistance r g f = 1 mhz 9 14 tu r n - o n d e l ay t i m e t d(on) v dd = - 100 v, r l = 100 i d ? - 1 a, v gen = - 10 v, r g = 1 914 ns rise time t r 11 18 turn-off delaytime t d(off) 28 42 fall time t f 12 18 tu r n - o n d e l ay t i m e t d(on) v dd = - 100 v, r l = 100 i d ? - 1 a, v gen = - 6 v, r g = 1 14 21 rise time t r 29 44 turn-off delaytime t d(off) 23 35 fall time t f 14 21 drain-source body diode characteristics continous source-drain diode current i s t c = 25 c - 0.95 a pulse diode forward current i sm - 3 body diode voltage v sd i s = - 1 a, v gs = 0 v - 0.81 - 1.2 v body diode reverse recovery time t rr i f = - 1.2 a, di/dt = 100 a/s, t j = 25 c 84 130 ns body diode reverse recovery charge q rr 235 350 nc reverse recovery fall time t a 46 ns reverse recovery rise time t b 38
document number: 74249 s-62239?rev. a, 06-nov-06 www.vishay.com 3 vishay siliconix si3475dv typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 1 2 3 4 5 0246810 v ds ? drain-to-source voltage (v) ) a ( t n e r r u c n i a r d ? i d v = 10 thru 4 v gs 1.00 1.20 1.40 1.60 1.80 2.00 012345 v gs = 10 v i d ? drain current (a) v gs = 6 v r ) n o ( s d ( ) e c n a t s i s e r - n o ? 0 2 4 6 8 10 0.0 2.5 5.0 7.5 10.0 12.5 i d = 1 a ) v ( e g a t l o v e c r u o s - o t - e t a g ? q g ? total gate charge (nc) v s g v ds = 125 v v ds = 75 v v ds = 100 v transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.3 0.6 0.9 1.2 1.5 02468 t c = 25 c t c = 125 c t c = - 55 c v gs ? gate-to-source voltage (v) ) a ( t n e r r u c n i a r d ? i d c rss 0 150 300 450 600 750 0 4 8 12 16 20 c oss c iss v ds ? drain-to-source voltage (v) ) f p ( e c n a t i c a p a c ? c 0.4 0.8 1.2 1.6 2.0 2.4 - 50 - 25 0 25 50 75 100 125 150 t j ? junction temperature (c) r ) n o ( s d e c n a t s i s e r - n o ? ) d e z i l a m r o n ( v gs = 6 v v gs = 10 v i d = 1 a
www.vishay.com 4 document number: 74249 s-62239?rev. a, 06-nov-06 vishay siliconix si3475dv typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 10 1 0.01 v sd - source-to-drain voltage (v) ) a ( t n e r r u c e c r u o s - i s 0 0.3 0.6 0.9 1.2 1.5 0.10 t j = 150 c t j = 25 c - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 5 a t j ? temperature (c) v ) h t ( s g ) v ( i d = 5 ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.0 1.2 2.4 3.6 4.8 6.0 0246810 v gs ? gate-to-source voltage (v) r ) n o ( s d ( ) e c r u o s - o t - n i a r d ? t a = 25 c t a = 125 c 0 3 6 60 12 24 ) w ( r e w o p time ( s ec) 4 8 10 0.01 0.001 0.1 1 safe operating area *v gs minimum v gs at which r ds(on) is specified 10 0.001 1 ) a ( t n e r r u c n i a r d ? i d 0.01 v ds ? drain-to-source voltage (v) 0.1 0.1 1 10 100 1000 *limited by r ds(on) t = 25 c single pulse 1 s 10 s dc 10 ms 100 ms 1 ms a
vishay siliconix si3475dv document number: 74249 s-62239?rev. a, 06-nov-06 www.vishay.com 5 mosfet typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 175 c, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dis- sipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating fal ls below the package limit. current derating* 0 0.2 0.4 0.7 0.9 c ? c as e temper a t u re (c) power (w) 0 25 50 75 100 125 150 1.1 t power, junction-to-foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c ? case temperature (c) ) w ( r e w o p power derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t c ? case temperature (c) r (w) e w o p
www.vishay.com 6 document number: 74249 s-62239?rev. a, 06-nov-06 vishay siliconix si3475dv typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?74249. normalized thermal transient impedance, junction-to-ambient 10 - 3 10 -2 110 10 -1 10 -4 100 1 0.1 0.01 s q ua re w a ve p u l s e d u r a tion ( s ec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.2 0.1 0.05 0.02 s ingle p u l s e d u ty cycle = 0.5 1. d u ty cycle, d = 2. per unit b as e = r thja = 75 c/w 3 . t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 note s : 4. su rf a ce mo u nted p dm 1000 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 -4 1 0.1 0.01 square wave pulse duration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 10 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5
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